Scipediacontent: Scipediacontent moved page Draft Content 800282787 to Chang et al 2019b

2021-02-01T20:03:26Z

Scipediacontent moved page Draft Content 800282787 to Chang et al 2019b

Scipediacontent: Created page with " == Abstract == Process, voltage and temperature variations are on the rise with technology scaling. Nano-scale technology requires huge design margins to ensure reliable ope..."

2021-02-01T20:03:20Z

Created page with " == Abstract == Process, voltage and temperature variations are on the rise with technology scaling. Nano-scale technology requires huge design margins to ensure reliable ope..."

New page

== Abstract ==

Process, voltage and temperature variations are on the rise with technology scaling. Nano-scale technology requires huge design margins to ensure reliable operation. Worst case design margining consumes significant amount of circuits and systems resources. In-situ error detection or correction is an alternative method for cost effective variation tolerance. However, existing in-situ error detection and correction circuits are power and area hungry since they use speculative error management, which gives less power savings at higher error rates. This paper proposes an error resilience technique utilizing available slack in the design. The proposed method uses a clock stretching circuit to relax timing margins on selected critical paths that has sufficient consecutive stage slack. We also propose a power optimization method which reshapes the critical path logic proportionate to the consecutive stage slack. Experimental results show that the proposed method achieves the power and area savings of 40% and 8% respectively compared to the worst case design approach. When compared to the TIMBER error resilience approach, the proposed method saves power more than 74% and area more than 13% at design time.

Document type: Article

== Full document ==
<pdf>Media:Draft_Content_800282787-beopen2535-3071-document.pdf</pdf>

== Original document ==

The different versions of the original document can be found in:

* [http://dx.doi.org/10.3390/jlpea9010005 http://dx.doi.org/10.3390/jlpea9010005] under the license https://creativecommons.org/licenses/by

* [https://www.mdpi.com/2079-9268/9/1/5/pdf https://www.mdpi.com/2079-9268/9/1/5/pdf] under the license http://creativecommons.org/licenses/by/3.0/

* [https://www.mdpi.com/2079-9268/9/1/5/pdf https://www.mdpi.com/2079-9268/9/1/5/pdf] under the license cc-by

* [http://www.mdpi.com/2079-9268/9/1/5/pdf http://www.mdpi.com/2079-9268/9/1/5/pdf],
: [http://dx.doi.org/10.3390/jlpea9010005 http://dx.doi.org/10.3390/jlpea9010005] under the license cc-by

* [http://xplorestaging.ieee.org/ielx7/7744451/7753408/07753570.pdf?arnumber=7753570 http://xplorestaging.ieee.org/ielx7/7744451/7753408/07753570.pdf?arnumber=7753570],
: [http://dx.doi.org/10.1109/vlsi-soc.2016.7753570 http://dx.doi.org/10.1109/vlsi-soc.2016.7753570] under the license https://creativecommons.org/licenses/by/4.0/

* [https://dblp.uni-trier.de/db/conf/vlsi/vlsisoc2016.html#JayakrishnanCK16 https://dblp.uni-trier.de/db/conf/vlsi/vlsisoc2016.html#JayakrishnanCK16],
: [https://dr.ntu.edu.sg/handle/10220/49055 https://dr.ntu.edu.sg/handle/10220/49055],
: [https://academic.microsoft.com/#/detail/2550302934 https://academic.microsoft.com/#/detail/2550302934]

* [https://www.mdpi.com/2079-9268/9/1/5 https://www.mdpi.com/2079-9268/9/1/5],
: [https://doaj.org/toc/2079-9268 https://doaj.org/toc/2079-9268]

* [https://www.mdpi.com/2079-9268/9/1/5/pdf https://www.mdpi.com/2079-9268/9/1/5/pdf],
: [https://www.mdpi.com/2079-9268/9/1/5 https://www.mdpi.com/2079-9268/9/1/5],
: [https://academic.microsoft.com/#/detail/2909454845 https://academic.microsoft.com/#/detail/2909454845]

DOIS: 10.1109/vlsi-soc.2016.7753570 10.3390/jlpea9010005

← Older revision	Revision as of 20:03, 1 February 2021
(No difference)

Chang et al 2019b - Revision history

Scipediacontent: Scipediacontent moved page Draft Content 800282787 to Chang et al 2019b

Scipediacontent: Created page with " == Abstract == Process, voltage and temperature variations are on the rise with technology scaling. Nano-scale technology requires huge design margins to ensure reliable ope..."